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Personal Information

Name AKASAKI Isamu Akasaki, Isamu
Section Section II, Fifth Subsection
Date of Election 2014/12/12
Speciality Semiconductor Engineering
Selected Bibliography
    1. I. Akasaki and M. Hashimoto: “INFRARED LATTICE VIBRATION OF VAPOUR-GROWN AlN”, Solid State Commun., Vol. 5, pp. 851-853, 1967.
    2. Y. Ohki, Y. Toyoda, H. Kobayasi and I. Akasaki: “Fabrication and properties of a practical blue-emitting GaN m-i-s diode”, Inst. Phys. Conf. Ser., No. 63, Chap. 10, pp. 479-484, 1981.
    3. I. Akasaki and H. Amano: (Invited Review Paper) “Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode”, Jpn. J. Appl. Phys. Vol. 45, pp. 9001-9010, 2006 and I Akasaki and H. Amano: Jpn.J.Appl.Phys.Vol 47,No.5,2008.p 3781: Erratum; “ [ Jpn.J.Appl.Phys.Vol.45  (2006) pp. 9001-9010] ”.
    4. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer”, Appl. Phys. Lett., Vol. 48, No. 5, pp. 353-355, 1986.
    5.  I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki: “EFFECTS OF AlN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL PROPERTIES OF GaN AND and Ga1-xAlxN (0<x≤0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE”, J. Crystal Growth, Vol. 98, pp. 209-219, 1989.
    6. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: “P-Type Conduction in Mg - Doped GaN Treated with Low - Energy Electron Beam Irradiation (LEEBI)”, Jpn. J. Appl. Phys., Vol. 28, No. 12, pp. L2112-L2114, 1989.
    7. H. Murakami, T. Asahi, H. Amano, K. Hiramatsu, N. Sawaki and I. Akasaki:  “Growth of Si-doped AlxGa1-xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy”, J. Crystal Growth, Vol. 115, pp. 648-651, 1991.
    8. H. Amano, T. Asahi and I. Akasaki: “Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer”, Jpn. J. Appl. Phys., Vol. 29, No. 2, pp. L205-L206, 1990.
    9. I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike: “Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device”, Jpn. J. Appl. Phys., Vol. 34, Pt. 2, No. 11B, pp. L1517-L1519, 1995.
    10. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki: “Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells”, Jpn. J. Appl. Phys., Vol. 36, Pt. 2, No. 4A, pp. L382-L385, 1997.

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